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Avalanche Breakdown Voltage Calculator

Avalanche Breakdown Voltage Calculator

Calculate the avalanche breakdown voltage for a PN junction diode using the equation:
\[ V_{BR} = \frac{\epsilon_s \, E_{crit}^2}{2qN} \] where \(\epsilon_s\) is the semiconductor permittivity, \(E_{crit}\) is the critical electric field, and \(N\) is the doping concentration.

* Enter all values in SI units.

Step 1: Enter Parameters

Example: 1.04e-10 F/m (for silicon: \(11.7 \times 8.854 \times 10^{-12}\))

Example: 1×1023 m\(^{-3}\)

Example: 3×107 V/m (typical for silicon)

Formula: \( V_{BR} = \frac{\epsilon_s \, E_{crit}^2}{2qN} \)


Practical Example:
For a silicon diode at 300 K with \( \epsilon_s = 1.04 \times 10^{-10} \) F/m, \( N = 1 \times 10^{23} \) m\(^{-3}\), and \( E_{crit} = 3 \times 10^{7} \) V/m,
\[ V_{BR} = \frac{1.04 \times 10^{-10} \times (3 \times 10^{7})^2}{2 \times 1.602 \times 10^{-19} \times 1 \times 10^{23}} \approx 2.92\, \text{V} \]

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